? 2008 ixys corporation, all rights reserved ds99849b(03/08) polar tm power mosfet hiperfet tm n-channel enhancement mode avalanche rated fast intrinsic diode features z fast recovery diode z unclamped inductive switching (uis) rated z low package inductance - easy to drive and to protect advantages z plus 264 tm package for clip or spring mounting z space savings z high power density symbol test conditions maximum ratings v dss t j = 25 c to 150 c 1100 v v dgr t j = 25 c to 150 c, r gs = 1m 1100 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c 40 a i dm t c = 25 c, pulse width limited by t jm 100 a i ar t c = 25 c 20 a e as t c = 25 c 2 j dv/dt i s i dm , v dd v dss ,t j 150 c 15 v/ns p d t c = 25 c 1250 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c f c mounting force 30..120/6.7..27 n/lb. weight 10 g IXFB40N110P g = gate d = drain s = source tab = drain symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 3ma 1100 v v gs(th) v ds = v gs , i d = 1ma 3.5 6.5 v i gss v gs = 30v, v ds = 0v 200 na i dss v ds = v dss 50 a v gs = 0v t j = 125 c 3 ma r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 260 m plus264 tm (ixfb) s g d (tab) v dss = 1100v i d25 = 40a r ds(on) 260 m t rr 300 ns applications: z high voltage switched-mode and resonant-mode power supplies z high voltage pulse power applications z high voltage discharge circuits in lasers pulsers, spark igniters, rf generators z high voltage dc-dc converters z high voltage dc-ac inverters
ixys reserves the right to change limits, test conditions, and dimensions. IXFB40N110P symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 20v, i d = 0.5 ? i d25 , note 1 20 32 s c iss 19 nf c oss v gs = 0v, v ds = 25v, f = 1mhz 1070 pf c rss 46 pf r gi gate input resistance 1.65 t d(on) 53 ns t r 55 ns t d(off) 110 ns t f 54 ns q g(on) 310 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 95 nc q gd 142 nc r thjc 0.10 c/ w r thcs 0.13 c /w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0v 40 a i sm repetitive, pulse width limited by t jm 160 a v sd i f = i s , v gs = 0v, note 1 1.5 v t rr 300 ns q rm i f = 20a, -di/dt = 100a/ s 2.2 c i rm v r = 100v, v gs = 0v 16 a note 1: pulse test, t 300 s; duty cycle, d 2%. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d =0.5 ? i d25 r g = 1 (external) plus264 tm (ixfb) outline
? 2008 ixys corporation, all rights reserved IXFB40N110P fig. 1. output characteristics @ 25oc 0 5 10 15 20 25 30 35 40 0123456789 v ds - volts i d - amperes v gs = 10 v 8 v 7 v 5v 6 v fig. 2. extended output characteristics @ 25oc 0 10 20 30 40 50 60 70 80 90 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 10 v 8 v 7 v 6 v 5v fig. 3. output characteristics @ 125oc 0 5 10 15 20 25 30 35 40 0 2 4 6 8 10121416182022 v ds - volts i d - amperes v gs = 10 v 7 v 5 v 6v fig. 4. r ds(on) normalized to i d = 20a value vs. junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 40 a i d = 20 a fig. 5. r ds(on) normalized to i d = 20a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 0 102030405060708090 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 5 10 15 20 25 30 35 40 45 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. IXFB40N110P ixys ref: f_40n110p(97) 03-28-08-a fig. 7. input admittance 0 5 10 15 20 25 30 35 40 45 50 55 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 5 10 15 20 25 30 35 40 45 50 55 0 5 10 15 20 25 30 35 40 45 50 55 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 10 20 30 40 50 60 70 80 90 100 110 120 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 2 4 6 8 10 12 14 16 0 50 100 150 200 250 300 350 400 450 q g - nanocoulombs v gs - volts v ds = 550v i d = 20a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. maximum transient thermal impedance 0.001 0.010 0.100 1.000 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
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